Researchers Database

KAKIUCHI, Takuhiro

    Graduate School of Science and Engineering Engineering for Production and Environment Assistant Professor
Last Updated :2020/10/13

Researcher Information

J-Global ID

Research Interests

  • Surface and Interface   Surface Physical Properties   Physical properties of semiconductor surfaces   Quantum chemistry   Structure Chemistry   Auger-electron spectroscopy   X-ray photoelectron spectroscopy   Coincidence spectroscopy   Surface Science   

Research Areas

  • Energy / Quantum beam science / Synchrotron radiation
  • Nanotechnology/Materials / Basic physical chemistry
  • Natural sciences / Semiconductors, optical and atomic physics / Surface and interface
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / High dielectric material

Academic & Professional Experience

  • 2008/04 - Today  Ehime UniversityGraduate School of Science and EngineeringAssistant Professor
  • 2017/08 - 2018/08  Helmholtz Zentrum BerlinMethods and Instrumentation for Synchrotron Radiation ResearchGuest Resecher

Education

  • 2006/04 - 2008/03  Graduate University for Advanced Studies  School of High Energy Accelerator Science  Department of Materials Structure Science
  •        - 2008  The Graduate University for Advanced Studies
  • 2004/04 - 2006/03  Ehime University  Graduate School of Science and Engineering  物質理学専攻
  • 2000/04 - 2004/03  Ehime University  Department of Chemistry  物質理学科
  •        - 2004  Ehime University  Faculty of Science

Association Memberships

  • JAPAN SOCIETY FOR MOLECULAR SCIENCE   THE SURFACE SCIENCE SOCIETY OF JAPAN   THE PHYSICAL SOCIETY OF JAPAN   THE CHEMICAL SOCIETY OF JAPAN   

Published Papers

  • T. Kakiuchi, T. Matoba, D. Koyama, Y. Yamamoto, D. Katoh, A. Yoshigoe
    Surface Science 701 121691-1 - 121691-8 2020/07 [Peer-reviewed]
     Scientific journal
  • Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 x 1 surfaces studied using core-level X-ray photoelectron spectroscopy
    KAKIUCHI Takuhiro, YAMASAKI Hideki, TSUKADA Chie, YOSHIGOE Akitaka
    Surface Science 693 121551-1 - 121551-8 2020/03 [Peer-reviewed]
     Scientific journal
  • Local valence electronic states of silicon (sub)oxides on HfO2/Si-(sub)oxide/Si(110) and HfSi2/Si-(sub)oxide/Si(110) Islands
    Takuhiro Kakiuchi, Kyouhei Ikeda, Kazuhiko Mase, Shin-ichi Nagaoka
    Surface Science 681 9 - 17 2019/03 [Peer-reviewed]
     Scientific journal
  • Takuhiro Kakiuchi, Yuya Yoshizaki, Hiroyuki Kubota, Yuki Sato, Shin-ichi Nagaoka, Kazuhiko Mase
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 86 (5) 0031-9015 2017/05 [Peer-reviewed]
     Scientific journal 
    A Si(110)-16 x 2 single-domain (SD) surface is investigated in a site-selective way using Si L23VV Auger-electron Si-2p photoelectron coincidence spectroscopy (Si-L23VV-Si-2p APECS) and Si-2p photoelectron Si-L23VV Auger-electron coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The Si(110)-16 x 2 SD consists of five Si-2p surface components (SC1-SC5) and has four semiconducting surface states (S-1-S-4). The Si-L2VV-Si-2p(1/2) APECS spectrum of the Si(110)-16 x 2 SD measured in coincidence with Si-2p(1/2) photoelectrons of SC3, SC4, and SC5 shows two small shoulders in the higher Auger electron kinetic energy (AeKE) region. These shoulders suggest Auger processes involving the surface states S-1 and S-3. The spectral weights of SC3, SC4, and SC5 Si-2p components are greatly enhanced in the Si-2p-Si-L23VV PEACS spectrum measured at Auger electrons with an AeKE of +5.0 eV relative to the Si L23VV peak. On the other hand, the spectral weights of SC1 and SC2 Si-2p components in the Si-2p-Si-L23VV PEACS spectrum show a maximum peak at a relative AeKE of +3 eV. These results directly support the correlations between the five surface components (SC1-SC5) and four surface states (S-1-S-4) in the adatom-buckling model for the Si(110)-16 x 2 SD proposed by Sakamoto et al.
  • Shin-ichi Nagaoka, Takuhiro Kakiuchi, Joji Ohshita, Osamu Takahashi, Yasumasa Hikosaka
    JOURNAL OF PHYSICAL CHEMISTRY A 120 (50) 9907 - 9915 1089-5639 2016/12 [Peer-reviewed]
     Scientific journal 
    Site-specific electron relaxations caused by Si:2p core-level photoionizations in F3SiCH2CH2Si(CH3)(3) and Cl3SiCH2CH2Si(CH3)(3) vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F3SiCH2CH2Si(CH3)3 shows almost 100% site-specificity in fragmentation-caused by the Si:2p ionization. However, substitution of Cl for F of F3SiCH2CH2Si(CH3)(3) considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site specificity reduction in Cl3SiCH2CH2Si(CH3)(3) is considered to take place during the transient period between Si:L23VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L23VV Auger decay at the Si site bonded to the three halogen atoms.
  • Takuhiro Kakiuchi, Masashi Tahara, Kazuhiko Mase, Shin-ichi Nagaoka
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 84 (4) 0031-9015 2015/04 [Peer-reviewed]
     Scientific journal 
    The local valence electronic states of Si3N4 films grown on Si(111)-7 x 7 [Si3N4/Si(111)] have been investigated by coincidence spectroscopy. The Si L23VV Auger electron spectra (AES) measured in coincidence with the Sin+ 2p photoelectrons of beta-Si3N4(0001)/Si(111)-8 x 8 indicate that the binding energy of the local valence electronic state at Sin+ increases as n increases. Si4+ L23VV AES measured as a function of the beta-Si3N4(0001) thickness show that the binding energy at the valence-band maximum (BEVBM) of beta-Si3N4(0001) decreases by 1.6 +/- 0.5 eV as the Si3N4 thickness decreases from 3.6 to 0.7 angstrom. The large decrease is attributed to the hybridization of the valence electronic state of Si3N4 with those of neighboring subnitrides and to the formation of beta-Si3N4(0001) islands. The BEVBM value of the 3.6-angstrom-Si3N4/Si(111)-quadruplet decreases by 0.7 +/- 0.6 eV from that of 3.6-angstrom-beta-Si3N4(0001)/Si(111)-8 x 8. The decrease in BEVBM is attributed to the different interface structures.
  • Kazuhiko Mase, Kenta Hiraga, Sadanori Arae, Rui Kanemura, Yusaku Takano, Kotaro Yanase, Yosuke Ogashiwa, Nariaki Shohata, Noritsugu Kanayama, Takuhiro Kakiuchi, Shinya Ohno, Daiichiro Sekiba, Koji K. Okudaira, Makoto Okusawa, Masatoshi Tanaka
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 83 (9) 0031-9015 2014/09 [Peer-reviewed]
     Scientific journal 
    Decay processes of Si 2s core holes in a clean Si(111)-7 x 7 surface are investigated using coincidence measurements of Si Auger electrons and Si 2s photoelectrons at a photon energy of 180 eV. We show that Si 2s core holes exhibit two nonradiative decay processes: the first being a Si L1L23V Coster-Kronig transition followed by delocalization of the valence hole and Si L23VV Auger decay, and the second being Si L1VV Auger decay. The branching ratio of the Si L1L23V Coster-Kronig transition to the Si L1VV Auger decay is estimated to be 96.7% +/- 0.4% to 3.2% +/- 0.4%.
  • オージェ電子-光電子コインシデンス分光によるシリコン単結晶表面および酸化シリコン超薄膜の局所電子状態の研究
    垣内拓大, 間瀬一彦, 長岡伸一
    ぶんせき 7 374 - 380 2014 [Peer-reviewed]
     Scientific journal
  • Sadanori Arae, Rui Kanemura, Kenta Hiraga, Yosuke Ogashiwa, Kohtaro Yanase, Noritsugu Kanayama, Shinya Ohno, Takuhiro Kakiuchi, Kazuhiko Mase, Koji K. Okudaira, Makoto Okusawa, Masatoshi Tanaka
    Journal of the Vacuum Society of Japan 56 (12) 507 - 510 1882-2398 2013 [Peer-reviewed]
     Scientific journal 
    We constructed two types of coincidence analyzers those can be used for Auger photoelectron coincidence spectroscopy and electron ion coincidence spectroscopy. The first one is designed for high electron energy resolution measurements, and consists of a double-pass coaxially symmetric mirror electron energy analyzer (DP-ASMA), a double-pass cylindrical mirror electron energy analyzer (DP-CMA), a time-of-flight ion mass spectrometer (TOF-MS), a magnetic shield, a conflat flange, an xyz stage, and a tilt adjustment mechanism. The second one is dedicated for high sensitivity measurements, and involves an ASMA with a large pinhole, DP-CMA with a large pinhole, and a TOF-MS.
  • Kazuhiko Mase, Eiichi Kobayashi, Akira Nambu, Takuhiro Kakiuchi, Osamu Takahashi, Kiyohiko Tabayashi, Joji Ohshita, Shogo Hashimoto, Masatoshi Tanaka, Shin-ichi Nagaoka
    SURFACE SCIENCE 607 174 - 180 0039-6028 2013/01 [Peer-reviewed]
     Scientific journal 
    Ion desorption from condensed F3SiCD2CH2Si(CH3)(3) induced by Si-2p core-level ionizations of the F3Si- and the -Si(CH3)(3) sites (Si[F] and Si[Me]) was investigated using photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy. A Si-2p-F+ PEPICO peak appeared selectively in the Si[F]-2p region. Si-2p-H+ PEPICO peaks were, on the other hand, observed in both the Si[Me]- and Si[F]-2p regions. The structure of the Si-L23VV-Si[F]-2p Auger photoelectron coincidence spectrum (APECS) was quite different from that of the Si-L23VV-Si[Me]-2p APECS. Ab initio molecular orbital calculations qualitatively reproduced the measured APECSs. The peak positions in the Si-L23VV-F+ AEPICO spectrum were in good agreement with those in the Si-L23VV-Si[F]-2p APECS. The Si-L23VV-H+ AEPICO spectrum, on the other hand, showed no characteristic peaks. Based on these results we have concluded that the site-specific F+ desorption is stimulated by Si [F]-L23VV Auger processes, and that both the Si[Me]- and Si[F]-L23VV Auger decays are responsible for the non-site-specific H+ desorption. (c) 2012 Elsevier B.V. All rights reserved.
  • Takuhiro Kakiuchi, Narihiko Fujita, Kazuhiko Mase, Masatoshi Tanaka
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 81 (7) 0031-9015 2012/07 [Peer-reviewed]
     Scientific journal 
    To clarify the factors governing the local valence electronic states of SiO2 ultrathin films, we have measured the Si-L23VV-Sin+-2p Auger-electron photoelectron coincidence spectra (n = 0, 1, 2, 3, 4, where n represents the number of oxygen atoms bonded to Si) of SiO2 thermally grown on a Si(111)-7 x 7 surface [SiO2/Si(111)]. The results indicate that the valence electronic states in the vicinity of the Sin+ sites shift to deeper binding energies as n increases. Furthermore, Si4+-L23VV Auger electron spectra, measured as a function of SiO2 thickness, taken in coincidence with Si4+-2p photoelectron emission show that the valence-band maximum (VBM) of the SiO2 layer shifts by 2.7 +/- 1.0 eV toward the Fermi level when SiO2 thickness is decreased to approximate to 1 monolayer (ML). This upward shift is much larger than that for a SiO2 layer with a thickness of approximate to 1 ML thermally grown on Si(100)-2 x 1 (about 1.6 eV). We attribute the large shift in the VBM of SiO2/Si(111) with a 1-ML-thick SiO2 layer to the formation of SiO2 islands on the 7 x 7 structure and to the presence of Si1+ atoms adjacent to the SiO2 sites.
  • Shin-ichi Nagaoka, Hironobu Fukuzawa, Georg Pruemper, Mai Takemoto, Osamu Takahashi, Katsuhiro Yamaguchi, Takuhiro Kakiuchi, Kiyohiko Tabayashi, Isao H. Suzuki, James R. Harries, Yusuke Tamenori, Kiyoshi Ueda
    JOURNAL OF PHYSICAL CHEMISTRY A 115 (32) 8822 - 8831 1089-5639 2011/08 [Peer-reviewed]
     Scientific journal 
    In an aim to create a "sharp" molecular knife, we have studied site-specific fragmentation caused by Si:2p core photoionization of bridged trihalosilyltrimethylsilyl molecules in the vapor phase. Highly site-specific bond dissociation has been found to occur around the core-ionized Si site in some of the molecules studied. The site specificity in fragmentation and the 2p binding energy difference between the two Si sites depend in similar ways on the intersite bridge and the electro-negativities of the included halogen atoms. The present experimental and computational results show that for efficient "cutting" the following conditions for the two atomic sites to be separated by the knife should be satisfied. First, the sites should be located far from each other and connected by a chain of saturated bonds so that intersite electron migration can be reduced. Second, the chemical environments of the atomic sites should be as different as possible.
  • Takuhiro Kakiuchi, Narihiko Fujita, Kazuhiko Mase, Masatoshi Tanaka, Shin-ichi Nagaoka
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 80 (8) 0031-9015 2011/08 [Peer-reviewed]
     Scientific journal 
    The local valence electronic states of the surface, interface, and substrate for SiO2 ultrathin films thermally grown on a Si(100)-2x1 have been investigated using Si-L23VV Auger-electron Sin+-2p photoelectron coincidence spectroscopy (n represents the number of oxygen atoms bonded to the Si). A series of Si-L23VV Auger electron spectra (AES) measured in coincidence with Sin+-2p photoelectron indicate that the valence electronic states in the vicinity of the Sin+ sites shift to the deeper binding-energy side as n increases. Furthermore, the Si4+-L23VV AES measured as a function of the thickness of the SiO2, show that the valence-band maximum of SiO2 shifts similar to 1.6 eV toward the Fermi level when the thickness of the SiO2 film is decreased to 1.7-1.5 angstrom. This shift is attributed to a decrease in the number of Si4+ and an increase in the number of Si3+, Si2+, Si1+, and Si-0 in the vicinity of the topmost SiO2 layer.
  • Takuhiro Kakiuchi, Masashi Tahara, Shogo Hashimoto, Narihiko Fujita, Masatoshi Tanaka, Kazuhiko Mase, Shin-ichi Nagaoka
    PHYSICAL REVIEW B 83 (3) 1098-0121 2011/01 [Peer-reviewed]
     Scientific journal 
    Valence electronic states of a clean Si(111)-7x7 surface are investigated in a surface-site-selective way using high-resolution coincidence measurements of Si L23VV Auger electrons and Si 2p photoelectrons. The Si L23VV Auger electron spectra measured in coincidence with energy-selected Si 2p photoelectrons show that the valence band at the highest density of states in the vicinity of the rest atoms is shifted by similar to 0.95 eV toward the Fermi level (E-F) relative to that in the vicinity of the pedestal atoms (atoms directly bonded to the adatoms). The valence-band maximum in the vicinity of the rest atoms, on the other hand, is shown to be shifted by similar to 0.53 eV toward E-F relative to that in the vicinity of the pedestal atoms. The Si 2p photoelectron spectra of Si(111)-7x7 measured in coincidence with energy-selected Si L23VV Auger electrons identify the topmost surface components, and suggest that the dimers and the rest atoms are negatively charged while the pedestal atoms are positively charged. Furthermore, the Si 2p-Si L23VV photoelectron Auger coincidence spectroscopy directly verifies that the adatom Si 2p component (usually denoted by C-3) is correlated with the surface state just below E-F (usually denoted by S-1), as has been observed in previous angle-resolved photoelectron spectroscopy studies.
  • Takuhiro Kakiuchi, Shogo Hashimoto, Narihiko Fujita, Masatoshi Tanaka, Kazuhiko Mase, Shin-ichi Nagaoka
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 79 (6) 064714-1 - 064714-4 0031-9015 2010/06 [Peer-reviewed]
     Scientific journal 
    Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L23VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms.
  • Takuhiro Kakiuchi, Shogo Hashimoto, Narihiko Fujita, Masatoshi Tanaka, Kazuhiko Mase, Shin-ichi Nagaoka
    SURFACE SCIENCE 604 (9-10) L27 - L30 0039-6028 2010/05 [Peer-reviewed]
     Scientific journal 
    Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1 0 0)-2 x 1 surface have been measured using Si-2p photoelectron Si-L(23)VV Auger coincidence spectroscopy (Si-2p-Si-L(23)VV PEACS). The escape depth of the PEACS electrons is estimated to be similar to 1.2 angstrom. The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of -0.23 eV relative to the bulk Si-2p(3/2) peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components. (C) 2010 Elsevier B.V. All rights reserved.
  • Yutaka Mera, Shijin Liang, Takayuki Fujiwara, Kiichiro Ishizaki, Takuhiro Kakiuchi, Kazuhiko Mase, Eiichi Kobayashi, Koji Okudaira, Koji Maeda
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268 (2) 127 - 130 0168-583X 2010/01 [Peer-reviewed]
     Scientific journal 
    In order to get insight into the mechanism of structural change in tetrahedral amorphous carbon (ta-C) films that is induced by soft X-ray illumination at photon energies near the carbon core edge, the desorption of ions from ta-C films, as a possible process taking place concurrently with the photo-induced restructuring, was studied by time-of-flight (TOF) measurements of photo-ions as a function of photon energy. The results show that (1) the main ions detected are H(+), (2) the desorption efficiency spectra exhibit a resonant peak at 286-287 eV which is common to all detected ions, and (3) is 3 eV lower than the resonant peak in the efficiency spectrum of photo-induced restructuring. These rule out the hypothesis that it is the photo-induced C-H bond rupture that causes the resonant soft X-ray-induced restructuring in ta-C films. (C) 2009 Elsevier B.V. All rights reserved.
  • Yutaka Mera, Takayuki Fujiwara, Kiichiro Ishizaki, Rong Xiang, Junichiro Shiomi, Shigeo Maruyama, Takuhiro Kakiuchi, Kazuhiko Mase, Koji Maeda
    JAPANESE JOURNAL OF APPLIED PHYSICS 49 (10) 105104-1 - 105104-5 0021-4922 2010 [Peer-reviewed]
     Scientific journal 
    We have investigated ion desorption from single-walled carbon nanotubes (SWNTs) that is induced by soft X-ray illumination in the C 1s core-excitation energy range in order to have insight to the mechanism of defect formation caused by the similar excitation. The mass of desorbed ions was analyzed by a time-of-flight (TOF) spectrometer and the photon energy dependence of the ion yield or the desorption efficiency spectra were measured as a function of the monochromatic photon energy used for illumination. Experimental results exclude the simple detachment of carbon atoms constituting the nanotubes from the cause of the defect formation. Also the photo-induced etching of carbon atoms associated with C-H bond rupture is ruled out from the defect formation mechanism. Auger mechanisms to explain the photo-induced desorption are discussed. (C) 2010 The Japan Society of Applied Physics
  • Shin-ichi Nagaoka, Akiko Nitta, Yusuke Tamenori, Hironobu Fukuzawa, Kiyoshi Ueda, Osamu Takahashi, Takuhiro Kakiuchi, Yoshinori Kitajima, Kazuhiko Mase, Isao H. Suzuki
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 175 (1-3) 14 - 20 0368-2048 2009/12 [Peer-reviewed]
     Scientific journal 
    A study on Auger-electron spectra of F3SiCH2CH2Si(CH3)(3) was performed by using monochromatized synchrotron radiation. The normal Si:L23VV Auger-electron spectrum was measured in the vapor phase and characterized through the ab initio molecular orbital calculation. The cascade Si:L23VV Auger-electron spectra were also obtained by L-23-holes creation through Si:KL23L23 Auger transitions after Si:1s photoexcitation in the vapor phase or its photoelectron emission in the condensed phase. Further the C:KVV and F:KVV Auger-electron spectra were measured and discussed in comparison with those of some related molecules. (C) 2009 Elsevier B.V. All rights reserved.
  • S. Nagaoka, A. Ouchi, T. Kakiuchi, K. Ohara, K. Mukai
    The Vitamin Society of Japan 83 (9) 521 - 527 2009/09
  • Takuhiro Kakiuchi, Kazuo Mukai, Keishi Ohara, Shin-ichi Nagaoka
    BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 82 (2) 216 - 218 0009-2673 2009/02 [Peer-reviewed]
     Scientific journal 
    A study of the kinetics of the proton-transfer reaction in flavonoid in ethanol solution by means of stopped-flow spectroscopy indicated that proton tunneling plays an important role in the antioxidant reaction.
  • Takuhiro KAKIUCHI, Shogo HASHIMOTO, Narihiko FUJITA, Kazuhiko MASE, Masatoshi TANAKA, Makoto OKUSAWA
    The Vacuum society of JapanJournai of the Vacuum society of Japan 51 (11) 749 - 757 1882-2398 2008/10 [Peer-reviewed]
  • Takuhiro Kakiuchi, Shogo Hashimoto, Narihiko Fujita, Kazuhiko Mase, Masatoshi Tanaka, Makoto Okusawa
    Shinku/Journal of the Vacuum Society of Japan 51 (11) 749 - 757 0559-8516 2008 [Peer-reviewed]
     Scientific journal 
    We have developed an electron electron ion coincidence (EEICO) apparatus for high-resolution Auger photoelectron coincidence spectroscopy (APECS) and electron ion coincidence (EICO) spectroscopy. It consists of a coaxially symmetric mirror electron energy analyzer (ASMA), a miniature double-pass cylindrical mirror electron energy analyzer (DP-CMA), a miniature time-of-flight ion mass spectrometer (TOF-MS), a magnetic shield, an xyz stage, a tilt-adjustment mechanism, and a conflat flange with an outer diameter of 203 mm. A sample surface was irradiated by synchrotron radiation, and emitted electrons were energy-analyzed and detected by the ASMA and the DP-CMA, while desorbed ions were mass-analyzed and detected by the TOF-MS. The performance of the new EEICO analyzer was evaluated by measuring Si 2p photoelectron spectra of clean Si(001)-2 × 1 and Si(lll)-7 × 7, and by measuring Si-Z, 23VV-Si-2p Auger photoelectron coincidence spectra (Si-L 23VV-Si-2p APECS) of clean Si(001)-2 × 1.
  • Takuhiro Kakiuchi, Efichi Kobayashi, Koji K. Okudaira, Narihiko Fujita, Masatoshi Tanaka, Kazuhiko Mase
    ANALYTICAL SCIENCES 24 (1) 87 - 92 0910-6340 2008/01 [Peer-reviewed]
     Scientific journal 
    We have developed a miniature electron ion coincidence (EICO) analyzer mounted on a conflat flange with an outer diameter of 114 mm. It consists of a cylindrical mirror analyzer (CMA), a time-of-flight ion mass spectrometer (TOF-MS), a commercially available linear motion feedthrough, and a tilt adjustment mechanism. Each sample surface was irradiated by synchrotron radiation, and the energies of emitted electrons were analyzed and detected by the CMA, while desorbed ions were collected by the TOF-MS in coincidence with the electrons. The performance of the EICO analyzer was tested by measuring the Auger-electron H+ photoion coincidence spectrum of condensed water at 4a(1) <-- O 1s resonance.
  • Takuhiro Kakiuchi, Eiichi Kobayashi, Naoyuki Okada, Ken Oyamada, Makoto Okusawa, Koji K. Okudaira, Kazuhiko Mase
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 161 (1-3) 164 - 171 0368-2048 2007/10 [Peer-reviewed]
     Scientific journal 
    We have developed an electron electron ion coincidence (EEICO) analyzer for Auger photoelectron coincidence spectroscopy (APECS) and electron ion coincidence (EICO) spectroscopy. It consists of a coaxially symmetric mirror electron energy analyzer (coASMA), a miniature cylindrical mirror electron energy analyzer (CMA), a miniature time-of-flight ion mass spectrometer (TOF-MS), a xyz stage, a tilt-adjustment mechanism, and a conflat flange with an outer diameter of 203 mm. A sample surface is irradiated by synchrotron radiation, and emitted electrons are energy-analyzed and detected by the coASMA and the CMA, while desorbed ions are detected by the TOF-MS. The performance of the new EEICO analyzer was tested by measuring Si-LVV-Si-2p APECS data of clean Si(1 1 1)7 x 7 and Si(1 1 1)7 x 7 covered by dissociated H(2)O, and by measuring the Auger-electron photoion coincidence (AEPICO) spectra of condensed H(2)O at the 4a(1) <- O Is resonance. (c) 2007 Elsevier B.V. All rights reserved.
  • Shin-ichi Nagaoka, Takuhiro Kakiuchi, Keishi Ohara, Kazuo Mukai
    CHEMISTRY AND PHYSICS OF LIPIDS 146 (1) 26 - 32 0009-3084 2007/03 [Peer-reviewed]
     Scientific journal 
    The rate constant and activation energy of the regeneration reaction of natural vitamin E by vitamin C were determined with a double-mixing stopped-flow spectrophotometer. The formation of vitamin C radical was observed in the absorption spectrum. The kinetic effect of methyl substitution on the aromatic ring of vitamin E radical indicates that partial charge-transfer plays a role in the reaction. Since a substantial deuterium kinetic isotope effect was not found, the tunneling effect may not play an important role under the present experimental conditions. (c) 2007 Elsevier Ireland Ltd. All rights reserved.
  • Eiichi Kobayashi, Kazuhiko Mase, Akira Nambu, Junya Seo, Shinichiro Tanaka, Takuhiro Kakiuchi, Koji K. Okudaira, Shin-ichi Nagaoka, Masatoshi Tanaka
    JOURNAL OF PHYSICS-CONDENSED MATTER 18 (30) S1389 - S1408 0953-8984 2006/08 [Peer-reviewed]
     Scientific journal 
    This paper reports on recent studies of photostimulated ion desorption (PSID) using electron ion coincidence (EICO) spectroscopy combined with synchrotron radiation. H(+) desorption from H(2)O dissociatively adsorbed on Si(111) and SiO2/Si(111) surfaces (H(2)O/ Si(111) and H(2)O/SiO(2)/Si(111)) was studied for Si L-edge excitation. The Si 2p-H(+) photoelectron photoion coincidence (PEPICO) and Si 2p photoelectron spectra of H2O/ Si(111) and H2O/SiO2/Si(111) show that H(+) desorption probability increases as the number of positive charges at the Si site increases. The H+ desorption probability per Si 2p ionization for the Si(4+) site was estimated and found to be 5-7 x 10(-5). We proposed a mechanism that H+ desorption is induced by Si 2p photoionization accompanied by a Si LVVV double-Auger transition. This article also reviews recent EICO work on site-specific ion desorption of 1,1,1, trifluoro-2-propanol-d1 (CF(3)CD(OH)CH(3)) adsorbed on Si(100) surfaces, and on themechanisms of PSID of poly( tetrafluoroethylene) (PTFE) and TiO(2)(110). Clear site-specific ion desorption was observed for the C 1s core excitation of a CF(3)CD(OH)CH(3) sub-monolayer on Si(100). A spectator-Auger-stimulated ion- desorption mechanism was proposed for F(+) desorption induced by a transition from F 1s to sigma(C-F)* of PTFE. O(+) desorption induced by O 1s excitation of TiO(2)(110) was attributed mainly to three-hole final states resulting from multi-electron excitation/decay. For O(+) desorption induced by Ti core excitation of TiO(2)(110), on the other hand, charge transfer from an O 2p orbital to a Ti 3d orbital, instead of the interatomic Auger transition, was proposed to
  • S Nagaoka, Y Tamenori, M Hino, T Kakiuchi, J Ohshita, K Okada, T Ibuki, IH Suzuki
    CHEMICAL PHYSICS LETTERS 412 (4-6) 459 - 463 0009-2614 2005/09 [Peer-reviewed]
     Scientific journal 
    Ionic fragmentation caused by Si: Is photoionization of 1-trifluorosilyl-2-trimethylsilyiethane [F3SiCH2CH2 Si(CH3)(3)] vapor was studied by the energy-selected photoclectron photoion coincidence method and monochromatized synchrotron radiation. In the Is photoionization at the Si atom bonded to three F atoms, H+ exceeded the other ions in the peak height, and production of SiF3+ ion seemed to be reduced. On the other hand, the Is photoionization at the other Si atom bonded to three CH3 groups enhanced production of H+ ion with high kinetic energy. These results suggest that Si:1s photoionization causes site-specific fragmentation. (c) 2005 Elsevier B.V. All rights reserved.
  • T Ibuki, Y Shimada, S Nagaoka, A Fujii, M Hino, T Kakiuchi, K Okada, K Tabayashi, T Matsudo, Y Yamana, IH Suzuki, Y Tamenori
    CHEMICAL PHYSICS LETTERS 392 (4-6) 303 - 308 0009-2614 2004/07 [Peer-reviewed]
     Scientific journal 
    Total photoabsorption cross-sections of trifluoromethyl sulfur pentafluoride, CF3SF5, were measured in the C, F and S K-shell regions by using a double ionization chamber and synchrotron radiation at the SPring-8 facility. The maximum cross sections were found to be 6.3, 5.0 and 1.1 Mb for the C, F and S K-edges, respectively. The spectral features in the F K-shell region were characterized by the photoabsorption spectra of CF4 and SF6 and those in the S K-shell region resemble the peaks of SF6. The observed peaks for CF3SF5 were tentatively assigned on the basis of a comparison with those for CF4 and SF6 measured simultaneously for references. (C) 2004 Elsevier B.V. All rights reserved.

Conference Activities & Talks

  • Initial oxidation process of ultrathin hafnium film on Si(111) surface studied by Hf 4f, Si 2p, and O 1s core-level spectroscopy  [Not invited]
    KAKIUCHI Takuhiro, KOYAMA Daisuke, YOSHIGOE Akitaka
    2019年日本表面真空学会学術講演会  2019/10
  • HfO2/Si超薄膜からのハフニウムジシリサイド形成とその表面局所価電子状態  [Not invited]
    垣内 拓大
    2018年度量子ビームサイエンスフェスタ  2019/03
  • Influence of hafnium chemical state difference on initial silicon oxidation at interface between hafnium deposition and Si(100) substrate  [Not invited]
    KAKIUCHI Takuhiro, YAMASAKI Hideki, TSUKADA chie, YOSHIGOE Akitaka
    2018年日本表面真空学会学術講演会  2018/10
  • Oxygen adsorption and desorption of ultrathin Hafnium film on clean Si(100)-2×1 surface  [Not invited]
    KAKIUCHI Takuhiro
    第12回分子科学討論会  2018/09
  • Si-(sub)0xides selective local valence electronic states of HfSi2/Si-(sub)0xides/Si(110) and HfO2/Si-(sub)oxides/Si(110)  [Not invited]
    Takuhiro Kakiuchi, Kyohei Ikeda, Kazuhiko Mase, Shin-ichi Nagaoka
    The International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces  2018/08
  • Local Valence Electronic States Selected at Surface/Interface of Ultra-Thin Hafnium Silicide Films Grown on Si(110)-16×2 Single Domain Surface  [Not invited]
    KAKIUCHI Takuhiro
    2016年度量子ビームサイエンスフェスタ(第8回MLFシンポジウム/第34回PFシンポジウム)  2017/03
  • 同時計数法を用いた固体試料表面界面の単原子分光  [Invited]
    垣内拓大
    京都工芸繊維大学「分子構造化学セミナー」  2017/03
  • Interface-Selective Study of Local Valence Electronic States of Ultrathin Hf/SiO2/Si(110) and HfO2/SiO2/Si(110) Films  [Not invited]
    T. Kakiuchi, K. Ikeda, S. Nagaoka, K. Mase
    2016年真空・表面科学合同講演会  2016/11
  • Surface and Interface Chemical-States and Local Valence Electronic Structures of Ultrathin SiO2 Films Fabricated on Clean Si(110)-16×2 Single Domain Surface  [Not invited]
    T. Kakiuchi, K. Ikeda, S. Nagaoka, K. Mase
    第10回分子科学討論会  2016/09
  • オージェ電子・光電子コインシデンス分光を用いた金薄膜のオージェ2正孔終状態におけるスピン軌道状態の検出  [Not invited]
    小玉開, 田中正人, 大野真也, 垣内拓大, 間瀬一彦, 奥平幸司, 田中正俊, 田中慎一郎
    日本物理学会第 71回年次大会  2016/03
  • Local Valence Electronic States at Interface of Hf and HfO2 Ultrathin Films Deposited on Clean Si(110)-16×2 Single Domain Surface  [Not invited]
    T. Kakiuchi, K. Ikeda, S. Nagaoka, K. Mase
    2015年度量子ビームサイエンスフェスタ(第7回MLFシンポジウム/第33回PFシンポジウム)  2016/03
  • Local Valence Electronic State Shift Depending on Thickness of SiO2 Ultrathin Films Grown on Clean Si(110)-16×2 Single Domain Surface  [Not invited]
    T. Kakiuchi, K. Ikeda, S. Nagaoka, K. Mase
    2015年度量子ビームサイエンスフェスタ(第7回MLFシンポジウム/第33回PFシンポジウム)  2016/03
  • オージェ電子ー光電子コインシデンス分光測定によるAu内殻正孔緩和過程の研究  [Not invited]
    小玉開, 田中正人, 大野真也, 垣内拓大, 間瀬一彦, 奥平幸司, 田中正俊, 田中慎一郎
    2015年真空・表面科学合同講演会  2015/12
  • Hafnium adsorption on clean Si(110)-16×2 single domain surface studied by low energy electron diffraction and electron spectroscopy  [Not invited]
    T. Kakiuchi, T. Katuragi, Y. Nakano, A. Yooshigoe, S. Nagaoka, K. Mase
    2015年真空・表面科学合同講演会  2015/12
  • Hydrogen adsorption on clean Si(110)-16×2 single domain surface studied by X-ray photoelectron and photoelectron-Auger-electron coincidence spectroscopies  [Not invited]
    T. Kakiuchi, Y. Nakano, S. Nagaoka, K. Mase
    2015年真空・表面科学合同講演会  2015/12
  • Hafnium adsorption to clean Si(110)-16×2 single domain surface studied with photoelectron spectroscopy  [Not invited]
    T. Kakiuchi, T. Katsuragi, Y. Nakano, S. Nagaoka, K. Mase
    International Conference on Electron Spectroscopy and Structure: ICESS-15  2015/09
  • Hydrogen adsorption to clean Si(110)-16×2 single domain surface and its chemical states  [Not invited]
    T. Kakiuchi, Y. Nakano, S. Nagaoka, K. Mase
    International Conference on Electron Spectroscopy and Structure: ICESS-15  2015/09
  • Decay processes of Au-4f core holes studies by Au-N6,7VV Auger-electron Au-4f photoelectron coincidence measurements  [Not invited]
    H. Kodama, M. Tanaka, S. Ohno, T. Kakiuchi, K. Mase, K. K. Okudaira, M. Tanaka, S. Tanaka
    第3回物構研サイエンスフェスタ  2015/03
  • Hydrogen atom adsorption process to clean Si(110)-16×2 single domain surface and its surface property  [Not invited]
    T. Kakiuchi, Y. Nakano, S. Nagaoka, K. Mase
    第3回物構研サイエンスフェスタ  2015/03
  • Surface Structure and Local Valence Electronic states of Si(110)-16×2 surface after exposure to water: XPS and Auger-photoelectron coincidence study  [Not invited]
    T. Kakiuchi, S. Nishiura, J. Kawamoto, S. Nagaoka, K. Mase
    Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)  2014/12
  • 水の解離吸着によるSi(110)-16×2清浄面の表面構造と局所価電子状態の変化  [Not invited]
    垣内拓大, 西浦伸吾, 川本淳滋, 長岡伸一, 間瀬一彦
    第34回表面科学学術講演会  2014/11
  • Dissociative adsorption of H2O on clean Si(110)-16×2 surface: change of surface property and one-dimensional structure  [Not invited]
    T. Kakiuchi, S. Nishiura, J. Kawamoto, S. Nagaoka, K. Mase
    第8回分子科学討論会  2014/09
  • Si-LVVオージェ電子‐Si 2s光電子コインシデンス分光によるSi-2s内殻正孔緩和過程の研究  [Not invited]
    平賀健太, 新江定憲, 兼村瑠威, 小柏洋輔, 梁瀬虹太朗, 高野優作, 金山典嗣, 大野真也, 垣内拓大, 所畑成明, 関場大一郎, 奥平幸司, 奥沢誠, 間瀬一彦, 田中正俊
    日本物理学会第69回年次大会  2014/03
  • Surface Sensitive Si-2p Photoelectron Spectrum Measurements of Clean Si(110)-16×2 Surface  [Not invited]
    T. Kakiuchi, K. Mase
    物構研サイエンスフェスタ2013  2014/03
  • 高感度電子-電子-イオンコインシデンス分光装置の性能評価とSi-LVVオージェ電子-Si‐2s光電子コインシデンス分光測定  [Not invited]
    平賀健太, 新江定憲, 兼村瑠威, 小柏洋輔, 梁瀬 虹太朗, 金山典嗣, 大野真也, 垣内拓大, 間瀬一彦, 奥平幸司, 奥沢誠, 田中正俊
    第27回日本放射光学会年会放射光科学合同シンポジウム  2014/01
  • Atomic Structure of Si(110)-16×2 Studied by Auger Photoelectron Coincidence Spectroscopy (APECS)  [Not invited]
    T. Kakiuchi, Y. Yoshizaki, H. Kubota, Y. Sato, K. Mase
    9th International Symposium on Atomic Level Characterizations for New Materials and Devices ’13  2013/12
  • 光電子-オージェ電子コインシデンス分光法によるSi(110)-16×2清浄表面の原子構造と局所価電子状態  [Not invited]
    垣内拓大, 吉崎佑也, 久保田裕之, 佐藤勇輝, 間瀬一彦
    2013年真空・表面科学合同講演会  2013/11
  • オージェ電子-光電子コインシデンス分光法を用いた表面研究の現状と展望  [Invited]
    垣内拓大
    2013年日本化学会中国四国支部大会  2013/11
  • Atomic Structure and Local Valence Electronic States of Clean Si(110)-16×2 surface by using Photoelectron Auger-electron coincidence spectroscopy  [Not invited]
    T. Kakiuchi, Y. Yoshizaki, H. Kubota, Y. Sato, K. Mase
    第7回分子科学討論会  2013/09
  • Si-L23VVオージェ電子-Si-2p光電子コインシデンス分光による表面第1層を水素化したSi(111)の局所電子状態の研究  [Not invited]
    新江定憲, 小柏洋輔, 梁瀬虹太朗, 越智啓太, 石井明日香, 大野真也, 垣内拓大, 間瀬一彦, 奥沢誠, 田中正俊
    物構研サイエンスフェスタ  2013/03
  • オージェ電子-光電子コインシデンス分光法を用いた Si(110)-16×2清浄表面の局所価電子状態の研究  [Not invited]
    垣内拓大, 佐藤勇輝, 花岡咲, 坂尾諒, 新江定憲, 田中正俊, 長岡伸一, 間瀬一彦
    物構研サイエンスフェスタ  2013/03
  • Construction and Evaluation of Auger-Photoelectron Coincidence Apparatus at BL13 of HiSOR  [Not invited]
    T. Kakiuchi, Y. Sato, S. Hanaoka, S. Kajikawa, H. Hayashita, M. Ogawa, S. Arae, S. Wada, T. Sekitani, S. Nagaoka, M. Tanaka, K. Mase
    Progress in materials science and synchrotron radiation  2013/02
  • Study of Local Valence Electronic States of SiO2 Ultrathin Films Grown on Si Single Crystal by using Auger Photoelectron Coincidence Spectroscopy  [Invited]
    Takuhiro Kakiuchi
    第32回表面科学学術講演会  2012/11
  • オージェ電子-光電子コインシデンス分光法によるSi(110)-16×2清浄表面の局所価電子状態の観測  [Not invited]
    垣内拓大, 佐藤勇輝, 花岡咲, 長岡伸一, 間瀬一彦
    第6回分子科学討論会  2012/09
  • Mechanism of highly charged Ar ions production induced by inner-shell ionization studied using Auger-electron – ion coincidence spectroscopy  [Not invited]
    T. Kakiuchi, S. Hanaoka, D. Tamaki, S. Fujiwara, Y. Yoshizaki, K. Mase, S. Nagaoka
    International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces  2012/08
  • Local valence electronic states of silicon nitride ultrathin films on Si(111) stud-ied by using Auger photoelectron coincidence spectroscopy (APECS)  [Not invited]
    T. Kakiuchi, M. Tahara, S. Nagaoka, K. Mase
    International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces  2012/08
  • Attempts to Improve the Sensitivity and the Energy Resolution of an Analyzer for Auger Photoelectron Coincidence Spectroscopy and Electron Ion Coincidence Spectroscopy  [Not invited]
    K. Mase, S. Arae, Y. Ogashiwa, S. Ohno, T. Kakiuchi, M. Okusawa, M. Tanaka
    11th International Conference on Synchrotron Radiation Instrumentation  2012/07
  • Study of Highly Charged Ar Ions Formed by Electron-Impact Ionization  [Not invited]
    T. Kakiuchi, S. Hanaoka, K. Mase, S. Nagaoka
    28th Symposium on Chemical Kinetics and Dynamics  2012/06
  • オージェ電子-光電子コインシデンス分光法による H2O/Si(111)表面における局所価電子状態の研究  [Not invited]
    新江定憲, 梶川隼平, 林下弘憲, 小川舞, 大野真也, 垣内拓大, 和田真一, 関谷徹司, 間瀬一彦, 奥沢誠, 田中正俊
    第25回日本放射光学会年会放射光科学合同シンポジウム  2012/01
  • Si(110)-16×2清浄表面の最安定構造モデル  [Not invited]
    垣内拓大, 久保田裕之, 田原雅士, 間瀬一彦, 長岡伸一
    第5回分子科学討論会  2011/09
  • Development of Coincidence Spectrometer for Study of Collision Dynamics between High-Energy Electron and Molecule  [Not invited]
    T. Ito, S. Inoue, M. Tahara, Y. Nakazato, H. Kubota, T. Kakiuchi, S. Nagaoka, K. Mase
    27th Symposium on Chemical Kinetics and Dynamics  2011/06
  • Local Valence Electronic Structure at Surface and interface of Si3N4 thermally grown on Si(111)  [Not invited]
    T. Kakiuchi, M. Tahara, S. Nagaoka, K. Mase
    第 28 回 PF シンポジウム  2011/03
  • オージェ電子-光電子コインシデンス分光法による Si(111)-7×7清浄表面の表面サイトを選択した局所価電子状態の研究  [Not invited]
    垣内拓大, 田原雅士, 長岡伸一, 間瀬一彦
    第4回分子科学討論  2010/09
  • Si3N4/Si(111)超薄膜の表面・界面・基板を選別した局所価電子状態の研究  [Not invited]
    田原雅士, 山口勝広, 垣内拓大, 間瀬一彦, 長岡伸一
    第4回分子科学討論会  2010/09
  • Development of Apparatus for Auger Electron - Ion Coincidence Spectroscopy and Auger Electron - Auger Electron Coincidence Spectroscopy in Gas Phase Using 5-keV Electron Gun  [Not invited]
    T. Kakiuchi, S. Inoue, M. Tahara, T. Itoh, H. Kubota, Y. Nakazato, S. Nagaoka, K. Mase
    International Conference on Many Particle Spectroscopy of Atoms, Clusters & Surfaces MPS 2010  2010/08
  • Auger electron spectra of hydrogenated Si(111) obtained with Auger electron photoelectron coincidence measurements  [Not invited]
    T. Yamazaki, S. Hashimoto, T. Kakiuchi, K. Mase, M. Tanaka
    International Conference on Many Particle Spectroscopy of Atoms, Clusters & Surfaces MPS 2010  2010/08
  • Site-selective ion desorption from CF3CH2OH dissociatively chemisorbed on Si(111) studied with photoelectron photoion coincidence (PEPICO) measurements  [Not invited]
    T. Yamazak, S. Hashimoto, T. Kakiuchi, K. Mase, S. Nagaoka, M. Tanaka
    International Conference on Many Particle Spectroscopy of Atoms, Clusters & Surfaces MPS 2010  2010/08
  • Development of Multi Coincidence Spectrometer Using 5-keV Electron Gun  [Not invited]
    S. Inoue, M. Tahara, T. Kakiuchi, S. Nagaoka, K. Mase
    26th Symposium on Chemical Kinetics and Dynamics  2010/06
  • 高エネルギー電子線励起に由来した内殻電子励起ダイナミクスを研究するための気体・表面試料用コインシデンス分光装置の開発  [Not invited]
    田原雅士, 井上慎平, 垣内拓大, 間瀬一彦, 長岡伸一
    2009 日本化学会西日本大会  2009/11
  • Si L23VV オージェ電子スペクトル計算によるSiO2/Si(001)超薄膜の表面・界面局所価電子状態の研究  [Not invited]
    山口勝広, 垣内拓大, 間瀬一彦, 高橋修, 長岡伸一
    2009 日本化学会西日本大会  2009/11
  • Study of local valence electronic states of Si3N4 grown on Si(111) and Si(001) using Auger photoelectron coincidence spectroscopy (APECS)  [Not invited]
    T. Kakiuchi, M. Tahara, H. Ishida, K. Mase, S. Nagaoka
    11-th International Conference on Electronic Spectroscopy and Structure  2009/10
  • Surface-selective study of Si-L23VV Auger-electron and Si-2p photoelectron spectra of Si(100)-2×1 and Si(111)-7×7 using Auger-electron photoelectron coincidence spectroscopy (APECS)  [Not invited]
    T. Kakiuchi, S. Hashimoto, N. Fujita, K. Mase, M. Tanaka
    11-th International Conference on Electronic Spectroscopy and Structure  2009/10
  • オージェ電子-光電子コインシデンス分光法を用いた Si3N4/Si(111)-8×8表面界面の局所価電子状態の研究  [Not invited]
    田原雅士, 垣内拓大, 山崎貴彦, 橋本章吾, 田中正俊, 間瀬一彦, 長岡 伸一
    2009/09
  • Development of an Apparatus for Auger Photoelectron Coincidence Spectroscopy (APECS) and Electron Ion Coincidence (EICO) Spectroscopy for Surface Study  [Not invited]
    T. Kakiuchi, S. Hashimoto, N. Fujita, K. Mase, M. Tanaka, M. Okusawa
    10th International Conference on Synchrotron Radiation Instrumentation  2009/09
  • オージェ電子-光電子コインシデンス分光法を用いたSi3N4/Si(111)-8×8表面のサイト選択的オージェ電子スペクトル測定による局所価電子状態の研究  [Not invited]
    田原雅士, 垣内拓大, 山崎貴彦, 橋本章吾, 田中正俊, 間瀬一彦, 長岡伸一
    日本化学会第89春季年会  2009/03
  • オージェ電子-光電子コインシデンス分光法を用いた Si3N4/Si(111)-8×8界面表面のサイト選択的オージェ電子 スペクトル測定による局所価電子状態の研究  [Not invited]
    垣内拓大, 田原雅士, 山崎貴彦, 橋本章吾, 田中正俊, 間瀬一彦, 長岡伸一
    第22回日本放射光学会年会・放射光科学合同シンポジウム  2009/01
  • オージェ電子-光電子コインシデンス分光法によるSiおよびSiO2超薄膜の表面界面局所価電子状態の研究  [Not invited]
    垣内拓大
    2008愛媛地区化学講演会  2008/12
  • Hydrogen Ion Desorption from Amorphous Carbon Films Induced by Resonant Core Electron Excitations  [Not invited]
    Y. Mera, S. Liang, T. Fujiwara, K. Ishizaki, T. Kakiuchi, K. Mase, E. Kobayashi, K. K. Okudaira, K. Maeda
    4th Vacuum and Surface Sciences Conference of Asia and Australia  2008/10
  • Local Valence Electronic States of SiO2 Ultrathin Films Grown on Si(100) and Si(111) Studied Using Auger Photoelectron Coincidence Spectroscopy (APECS)  [Not invited]
    T. Kakiuchi, N. Fujita, K. Mase, M. Tanaka
    4th Vacuum and Surface Sciences Conference of Asia and Australia  2008/10
  • コインシデンス分光法による凝縮F3SiCD2CH2Si(CH3)3のサイト選択的オージェ過程およびイオン脱離の研究  [Not invited]
    橋本章吾, 藤田斉彦, 垣内拓大, 間瀬一彦, 大下浄治, 長岡伸一, 田中正俊
    第49回真空に関する連合講演会  2008/10
  • 高分解能電子―電子-イオンコインシデンス分光によるSi単結晶清浄表面の表面最上層のSi 2p 光電子およびSi L23VVオージェ電子スペクトル測定  [Not invited]
    垣内拓大, 藤田斉彦, 橋本章吾, 間瀬一彦, 田中正俊
    第2回分子科学討論会  2008/09
  • 改良型電子-電子-イオンコインシデンス分光装置の開発とサイト選択的イオン脱離研究への応用  [Not invited]
    垣内拓大, 藤田斉彦, 橋本章吾, 間瀬一彦, 大下浄治, 長岡伸一, 田中正俊
    日本物理学会2008年秋季大会  2008/09

MISC

  • 垣内拓大, 山崎英輝, 塚田千恵, 塚田千恵, 吉越章隆  分子科学討論会講演プログラム&要旨(Web)  12th-  ROMBUNNO.2P049 (WEB ONLY)  2018
  • Surface- and Interface-Selective Local Valence Electronic States of Ultrathin Hafnium Silicide Films Deposited on Clean Si(110) Surface
    T. Kakiuchi, M. Yamasaki, K. Mase  PF Act. Rep. 2016  34-  2017  Report research institution
  • Kakiuchi Takuhiro, Katsuragi Takuma, Nakano Yuji, Yoshigoe Akitaka, Nagaoka Shin-ichi, Mase Kazuhiko  Abstract of annual meeting of the Surface Science of Japan  35-  (0)  2015  
    我々はSi(110)-16&times;2シングルドメイン清浄表面にハフニウム(Hf)の金属蒸気を曝露したときの表面構造と表面状態の変化を低速電子回折と電子分光法により研究した。HfはSi(110)-16&times;2 SD清浄表面にランダムに吸着し、アニール処理するとSi(110)基板の16&times;2構造のダブルドメイン構造が現れた。また、特定表面サイトに局在していた表面準位はHf吸着によって消失した。
  • Surface-site-selective study of valence electronic states of a clean Si(111)-7×7 surface using Si-L23VV Auger electron and Si-2p photoelectron coincidence measurements
    American Physical SocietyPhysical Review B  83-  035320  2011
  • Takahiko Yamazaki, Shogo Hashimoto, Takuhiro Kakiuchi, Kazuhiko Mase, Masatoshi Tanaka  INTERNATIONAL CONFERENCE ON MANY PARTICLE SPECTROSCOPY OF ATOMS, MOLECULES, CLUSTERS AND SURFACES  288-  012016 (1)  -012016 (5)  2011  Introduction international proceedings  
    The Si-L-23 VV Auger electron Si-2p photoelectron coincidence spectra (Si-L-23 VV-Si-2p APECS) of a hydrogenated Si(111)-1x1 surface are measured with an analyzer that is used for electron-electron and electron-ion coincidence measurements of surfaces. The Si-L-23 VV-Si-2p APECS show a sharp peak, a small shoulder, and a broad large peak at electron kinetic energies of about 85, about 80.5, and about 70 eV, respectively. The clarity of the last two peaks is lower in the Si-L-23 VV-Si-2p APECS of a clean Si(111)-7x7 surface. We attribute the three peaks to the Si-L23V3pV3p, Si-L23V3pV3s, and Si-L23V3sV3s Auger lines, respectively. The three-peak structure indicates that the local density of states of the 3s + 3p band is reduced in the case of the hydrogenated Si(111)-1x1 surface. This finding is consistent with that of a previous study on valence electronic states of hydrogenated Si(111) using ultraviolet photoemission spectroscopy.
  • 表面研究用オージェ電子-光電子コインシデンス分光、電子-イオンコインシデンス分光兼用装置、および電子-極角分解イオンコインシデンス分光装置の開発
    Photon Factory News編集委員会Photon Factory News  27-  (3)  37  2009
  • Titanium Dioxide (TiO2) Single Crystal Holder with a Cold Trap and a Heating Mechanism Mounted on a Con‰at Flange with an Outer Diameter of 70 mm
    T. Kakiuchi, K. Mase  JJ. Vac. Soc. Jpn.  51-  44  -47  2008/10  Introduction other
  • Takuhiro Kakiuchi, Kazuhiko Mase  Journal of the Vacuum Society of Japan  51-  (1)  44  -47  2008  
    We introduce a titanium dioxide (TiO2) single crystal holder with a cold trap and a heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. The basic design of the TiO2 holder is the same with the holder for the silicon (Si) single crystal wafer [E. Kobayashi, A. Nambu, T. Kakiuchi, and K. Mase: Shinku, 50 (2007) 57]. A TiO2 single crystal wafer is fixed on a Si wafer, and the TiO2 is heated by the direct-current heating of the Si wafer. Using this holder we prepared clean TiO2(110)-1×1.
  • Shin-ichi Nagaoka, Takuhiro Kakiuchi, Keishi Ohara, Kazuo Mukai  CHEMISTRY AND PHYSICS OF LIPIDS  146-  (1)  26  -32  2007/03  
    The rate constant and activation energy of the regeneration reaction of natural vitamin E by vitamin C were determined with a double-mixing stopped-flow spectrophotometer. The formation of vitamin C radical was observed in the absorption spectrum. The kinetic effect of methyl substitution on the aromatic ring of vitamin E radical indicates that partial charge-transfer plays a role in the reaction. Since a substantial deuterium kinetic isotope effect was not found, the tunneling effect may not play an important role under the present experimental conditions. (c) 2007 Elsevier Ireland Ltd. All rights reserved.
  • Development of an Electron Electron Ion Coincidence Apparatus for Auger-Photoelectron Coincidence Spectroscopy (APECS) and Electron Ion Coincidence (EICO) Spectroscopy
    Photon FactoryPF Activity Report 2006, Part A, Highlights 55  A-  55  2007
  • Eiichi Kobayashi, Akira Nambu, Takuhiro Kakiuchi, Kazuhiko Mase  Shinku/Journal of the Vacuum Society of Japan  50-  (1)  57  -59  2007  Introduction other  
    We introduce a silicon single crystal wafer holder with a cold trap and a direct current heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. It consists of 300-ml cold trap, tantalum electrodes for direct-current heating and commercial electrical feedthroughs. A silicon single crystal with a size of 30 × 5 × 0.5 mm can be heated to > 1100 °C by direct heating, and can be cooled down to < 100 K with liquid nitrogen.
  • Development of an Electron Electron Ion Coincidence Apparatus for Auger-Photoelectron Coincidence Spectroscopy (APECS) and Electron Ion Coincidence (EICO) Spectroscopy
    Photon FactoryPF Activity Report 2006, Part A, Highlights 55  A-  55  2007
  • Eiichi Kobayashi, Akira Nambu, Takuhiro Kakiuchi, Kazuhiko Mase  Shinku/Journal of the Vacuum Society of Japan  50-  (1)  57  -59  2007  
    We introduce a silicon single crystal wafer holder with a cold trap and a direct current heating mechanism mounted on a conflat flange with an outer diameter of 70 mm. It consists of 300-ml cold trap, tantalum electrodes for direct-current heating and commercial electrical feedthroughs. A silicon single crystal with a size of 30 × 5 × 0.5 mm can be heated to > 1100 °C by direct heating, and can be cooled down to < 100 K with liquid nitrogen.
  • 垣内拓大, 小原敬士, 長岡伸一, 向井和男  分子構造総合討論会講演要旨集(CD-ROM)  2004-  3P077  2004/09

Awards & Honors

  • 2019/12 Faculty of Science, Ehime University Research Encouragement Prize
     
    受賞者: KAKIUCHI Takuhiro

Research Grants & Projects

  • 凹凸あるSi表面でのhigh-k材料超薄膜の成長過程とその低次元物性発現の観測
    日本学術振興会:基盤研究(C)
    Date (from‐to) : 2017/04 -2020/03 
    Author : 垣内拓大
  • Si(110)単結晶上に作製した二酸化ハフニウム超薄膜の表面界面を選 別した局所価電子状態の同時観測
    公益財団法人村田学術振興財団:海外派遣援助
    Date (from‐to) : 2018/06 -2018/08 
    Author : 垣内 拓大
  • 固体表面研究用角度分解同時計数装置の開発による単原子分光研究
    国立大学法人愛媛大学:愛媛大学外国派遣研究員制度
    Date (from‐to) : 2017/08 -2018/03 
    Author : 垣内拓大
  • リアルタイムX線光電子分光法によるシリコン(Si)単結晶上に作製したハフニウム(Hf)超薄膜の酸化過程の観測
    文部科学省:ナノテクノロジープラットフォーム事業
    Date (from‐to) : 2016/08 -2017/03 
    Author : 垣内拓大
  • 不活性Si(110)表面の1次元構造を利用した高誘電体超薄膜作製と薄膜物性評価
    日本学術振興会:若手研究(B)
    Date (from‐to) : 2014/04 -2016/03 
    Author : 垣内拓大
  • 分子/半導体表面の個々の原子サイトを選別した局所電子状態、電子励起ダイナミク ス
    日本学術振興会:基盤研究(B)
    Date (from‐to) : 2012/04 -2015/03 
    Author : 間瀬一彦
  • Si(110)表面の1次元列を利用したマルチプルゲートスタック構造の開発に向けて
    公益財団法人:村田学術振興財団
    Date (from‐to) : 2013/09 -2014/09 
    Author : 垣内拓大
  • Si(110)表面の1次元鎖をチャンネルワイヤーとしたマルチプルゲートスタック構造の創製
    公益財団法人:日揮実吉奨学会
    Date (from‐to) : 2013/09 -2014/03 
    Author : 垣内拓大
  • メタルシリサイド超薄膜の埋もれた表面界面準位の選択的かつ定量的観測
    国立大学法人愛媛大学:理学部長裁量経費
    Date (from‐to) : 2013/08 -2014/03 
    Author : 垣内拓大
  • 金属・金属酸化物高誘電体超薄膜の表面界面近傍に特異な局所価電子状態の定量的観測
    日本学術振興会:若手研究(B)
    Date (from‐to) : 2011/04 -2013/03 
    Author : 垣内拓大
  • 高誘電体ゲート絶縁膜の表面界面局所価電子状態の研究
    公益財団法人住友財団:基礎科学研究助成
    Date (from‐to) : 2010/11 -2012/03 
    Author : 垣内拓大
  • 小規模実験室専用コインシデンス分光装置の開発による気体分子の内殻電子励起ダイナミクスの研究
    国立大学法人愛媛大学:萌芽研究
    Date (from‐to) : 2008/08 -2011/03 
    Author : 垣内拓大
  • 気体および固体の内殻電子励起ダイナミクスの研究が可能な電子銃を用いた実験室用コインシデンス分光装置の開発
    公益財団法人松尾学術振興財団:松尾学術研究助成
    Date (from‐to) : 2008/10 -2010/03 
    Author : 垣内拓大

Social Contribution

  • 原子・分子の世界を“見て” 、“理解し”、想像(創造)する!
    Date (from-to) : 2016/09/26-2016/09/26
    Role : Lecturer
    Sponser, Organizer, Publisher  : 文部科学省
    Event, Program, Title : 高松第一高等学校(SSH)
  • 物質の世界を理解し、機能材料を創製する!
    Date (from-to) : 2015/09/14-2015/09/14
    Role : Lecturer
    Sponser, Organizer, Publisher  : 文部科学省
    Event, Program, Title : 高松第一高等学校(SSH)
  • ドライアイスで遊ぼう
    Date (from-to) : 2015/08/22-2015/08/23
    Role : Planner
    Sponser, Organizer, Publisher  : 愛媛大学理学部
    Event, Program, Title : 親子で楽しむ科学実験
  • スライムを作ろう
    Date (from-to) : 2014/08/23-2014/08/24
    Role : Planner
    Sponser, Organizer, Publisher  : 愛媛大学理学部
    Event, Program, Title : 親子で楽しむ科学実験
  • 低温の世界
    Date (from-to) : 2013/08/24-2013/08/25
    Role : Planner
    Sponser, Organizer, Publisher  : 愛媛大学理学部
    Event, Program, Title : 親子で楽しむ科学実験
  • 光(ひかり)の万華鏡(まんげきょう)を作(つく)ろう
    Date (from-to) : 2012/08/17-2012/08/19
    Role : Planner
    Sponser, Organizer, Publisher  : 日本化学会中国四国支部
    Event, Program, Title : おもしろワクワク化学の世界
  • 2012研究者入門
    Date (from-to) : 2012/07/14-2012/07/16
    Role : Lecturer
    Sponser, Organizer, Publisher  : 総合研究大学院大学
    Event, Program, Title : 研究者入門2012 − 研究者コミュニティーへの招待

Others

  • 2019/04 -2019/04 high-k材料/Si単結晶系の表面界面における化学状態と局所価電子状態
    物質構造化学研究所放射光共同利用実験申請課題、代表、採択、課題番号:2019G060
  • 2017/04 -2017/04 凹凸あるSi表面上に作製したhigh-k材料超薄膜の分光学的研究;吸着ダイナミクスと表面界 面物性
    物質構造科学研究所放射光共同利用実験申請課題、代表、採択、課題番号:2017G041
  • 2016/12 -2016/12 リアルタイム光電子分光法によるSi 単結晶上に作製したHf 超薄膜表面界面の酸化過程の解明
    SPring-8内JAEA、BL23SU、平成28年度(下期)施設供用研究課題、代表、採択、課題番号:2016B-E15
  • 2015/04 -2015/04 Si(110)表面上に作製した金属・酸化物超薄膜の表面界面局所価電子状態の研究
    物質構造科学研究所放射光共同利用実験申請課題、代表、採択、課題番号:2015G011
  • 2013/04 -2013/04 Si(110)表面上に作製した誘電体・金属シリサイド超薄膜の表面界面局所価電子状態の研究
    物質構造科学研究所放射光共同利用実験申請課題、代表、採択、課題番号:2013G019
  • 2011/06 -2011/06 コインシデンス分光による Si 表面上に作成した高誘電体超薄膜の局所価電子状態の研究
    平成23年度広島大学放射光科学研究センター共同研究課題、代表、採択、課題番号:11-B-24
  • 2011/04 -2011/04 コインシデンス分光によるSi表面上に作製した高誘電体超薄膜の局所価電子状態の研究
    物質構造科学研究所放射光共同利用実験G課題、代表、採択、課題番号:2011G099

愛媛大学教員活動実績

教育活動(B)

担当授業科目(B01)

  • 2019, the first semester, under graduate, 卒業研究Ⅰ
  • 2019, the first semester, master course, 分子科学高等実習Ⅱ
  • 2019, the first semester, master course, 化学ゼミナールⅢ


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