Ikuya Yamada, Hidenobu Etani, Kazuki Tsuchida, Shohei Marukawa, Naoaki Hayashi, Takateru Kawakami, Masaichiro Mizumaki, Kenya Ohgushi, Yoshihiro Kusano, Jungeun Kim, Naruki Tsuji, Ryoji Takahashi, Norimasa Nishiyama, Toru Inoue, Tetsuo Irifune, Mikio Takano
INORGANIC CHEMISTRY 52 23 13751 - 13761 2013年12月
[査読有り] 研究論文(学術雑誌)
Unusual electronic phase transitions in the A-site ordered perovskites LnCu(3)Fe(4)O(12) (Ln: trivalent lanthanide ion) are investigated. All LnCu(3)Fe(4)O(12) compounds are in identical valence states of Ln(3+)Cu(3)(2+)Fe(4)(3.75+)O(12) at high temperature. LnCu(3)Fe(4)O(12) with larger Ln ions (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb) show an intersite charge transfer transition (3Cu(2+) + 4Fe(3.75+) -> 3Cu(3+) + 4Fe(3+)) in which the transition temperature decreases from 360 to 240 K with decreasing Ln ion size. In contrast, LnCu(3)Fe(4)O(12) with smaller Ln ions (Ln = Dy, Ho, Er, Tm Yb, Lu) transform into a charge-disproportionated (8Fe(3.75+) -> 5Fe(3+) + 3Fe(5+)) and charge-ordered phase below similar to 250-260 K The former series exhibits metal-to-insulator, antiferromagnetic, and isostructural volume expansion transitions simultaneously with intersite charge transfer. The latter shows metal-to-semiconductor, ferrimagnetic, and structural phase transitions simultaneously with charge disproportionation. Bond valence calculation reveals that the metal-oxygen bond strains in these compounds are classified into two types: overbonding or compression stress (underbonding or tensile stress) in the Ln-O (Fe-O) bond is dominant in the former series, while the opposite stresses or bond strains are found in the latter. Intersite charge transfer transition temperatures are strongly dependent upon the global instability indices that represent the structural instability calculated from the bond valence sum, whereas the charge disproportionation occurs at almost identical temperatures, regardless of the magnitude of structural instability. These findings provide a new aspect of the structure-property relationship in transition metal oxides and enable precise control of electronic states by bond strains.